單晶

摻雜

導(dǎo)電
類型

載流子濃度cm-3

位錯(cuò)密
度cm-2

生長方法
最大尺寸

標(biāo)準(zhǔn)
基片

GaSb

None
None high R
Zn
Te
Te high R

P
P-
P+
N
N

1~2×1017
1~5×1016
1~5×1018
2~6×1017
1~5×1016

＜103

LEC
Φ3″

Φ3″×0.5
Φ2″×0.5

Typical Electrical Properties

Dopant available

Te

Zn

Undoped

Type of conductivity

N

P

P

Concentration ( cm -3 )

1E17 - 5E18

2E17 - 4E18

x

Hall Mobility ( cm 2 / v.s. ) 

2500 - 3500

200 - 500

600 - 700

Standard Specifications

Growth method

LEC

Diameter ( mm )

50.8

Thickness ( um )

500 +/-25 um

Conductivity

Semi-conducting

Orientation

< 100> ， < 111> ， < 110>

Off orientation

From 2° to 10° off

Flat options

EJ or US SEMI. Std .

Surface finish

One side or two sides polished

EPD ( cm-2)

< 1000 or < 10000